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Raman spectra and excitonic effects of the novel Ta2Ni3Te5 monolayer

Raman spectra and excitonic effects of the novel Ta2Ni3Te5 monolayer

Alexandre C. Dias, Raphael M. Tromer, Humberto R. Gutiérrez, Douglas S. Galvão, Elie A. Moujaes

ARTIGO

Inglês

Agradecimentos: The Article Processing Charge for the publication of this research was funded by the Coordination for the Improvement of Higher Education Personnel - CAPES (ROR identifier: 00x0ma614). The authors are grateful for the computational resources provided by Centro Nacional de... Ver mais
Abstract: We have investigated the Raman spectrum and excitonic effects of the novel 2D Ta2Ni3Te5 structure. The monolayer is an indirect band gap semiconductor with an electronic band gap value of 0.09 and 0.38 eV, determined using GGA-PBE and HSE06 exchange-correlation functionals, respectively.... Ver mais

COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES

CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ

408144/2022-0; 305174/2023-1; 315324/2023-6

FUNDAÇÃO DE APOIO À PESQUISA DO DISTRITO FEDERAL - FAPDF

00193-00001817/2023-43; 00193-00002073/2023-84; 00193-00000867/2024-94

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP

2013/08293-7

Aberto

Raman spectra and excitonic effects of the novel Ta2Ni3Te5 monolayer

Alexandre C. Dias, Raphael M. Tromer, Humberto R. Gutiérrez, Douglas S. Galvão, Elie A. Moujaes

										

Raman spectra and excitonic effects of the novel Ta2Ni3Te5 monolayer

Alexandre C. Dias, Raphael M. Tromer, Humberto R. Gutiérrez, Douglas S. Galvão, Elie A. Moujaes

    Fontes

    ACS omega (Fonte avulsa)