Valence-bond theory of highly disordered quantum antiferromagnets
S. Zhou, J. A. Hoyos, V. Dobrosavljevic, E. Miranda
ARTIGO
Inglês
Agradecimentos: We thank R. Bhatt for useful discussions, and R. Stratt for very helpful comments about the hardsphere problem. This work was supported by FAPESP grant 07/57630-5 (EM), CNPq grant 305227/2007-6 (EM), and by NSF grants DMR-0506953 (JAH) and DMR-0542026 (VD)
Abstract: We present a large-N variational approach to describe the magnetism of insulating doped semiconductors based on a disorder-generalization of the resonating-valence-bond theory for quantum antiferromagnets. This method captures all the qualitative and even quantitative predictions of the...
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Abstract: We present a large-N variational approach to describe the magnetism of insulating doped semiconductors based on a disorder-generalization of the resonating-valence-bond theory for quantum antiferromagnets. This method captures all the qualitative and even quantitative predictions of the strong-disorder renormalization group approach over the entire experimentally relevant temperature range. Finally, by mapping the problem on a hard-sphere fluid, we could provide an essentially exact analytic solution without any adjustable parameters
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FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP
07/57630-5
CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ
305227/2007-6
Fechado
Sen, Zhou
Autor
Dobrosavljevic, Vladimir
Autor
Valence-bond theory of highly disordered quantum antiferromagnets
S. Zhou, J. A. Hoyos, V. Dobrosavljevic, E. Miranda
Valence-bond theory of highly disordered quantum antiferromagnets
S. Zhou, J. A. Hoyos, V. Dobrosavljevic, E. Miranda
Fontes
Europhysics letters. A letters journal exploring the frontiers of physics (Fonte avulsa) |