Abstract: We investigated the near band gap luminescence of EuTe thin films grown by molecular beam epitaxy, using excitation intensities up to 2 x 10(5) W/cm(2). Besides the previously reported high energy emissions MX1 and MX2, we observed an additional emission band at higher energies. This higher-energy band is only detected when high excitation intensities, over 2 kW/cm(2), are used. With increasing externally applied magnetic field, this additional emission band shifts to lower energies at a rate even higher than the MX1. The two bands, however, have different temperature dependences and decay times, suggesting that distinct electronic states are involved in their emission Ver menos