CdSe/CdTe interface band gaps and band offsets calculated using spin–orbit and self-energy corrections

CdSe/CdTe interface band gaps and band offsets calculated using spin–orbit and self-energy corrections

M Ribeiro Junior, L. G. Ferreira, L. R. C. Fonseca, R. Ramprasad

ARTIGO

Inglês

We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction scheme [L.G. Ferreira, M. Marques, L.K. Teles, Phys. Rev. B 78 (2008) 125116]...

COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES

CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP

Fechado

CdSe/CdTe interface band gaps and band offsets calculated using spin–orbit and self-energy corrections

M Ribeiro Junior, L. G. Ferreira, L. R. C. Fonseca, R. Ramprasad


										

CdSe/CdTe interface band gaps and band offsets calculated using spin–orbit and self-energy corrections

M Ribeiro Junior, L. G. Ferreira, L. R. C. Fonseca, R. Ramprasad

    Fontes

    Materials science and engineering B: advanced functional solid-state materials

    Vol. 177, no. 16 (Sep., 2012), p. 1460-1464