Frequency- and time-domain simulations of semiconductor optical amplifiers using equivalent circuit modeling
ARTIGO
Inglês
Agradecimentos: The authors thank Professor Adriano Toazza (UPF, RS/Brazil) for the software used to automate the EO transmission measurements. This work was supported in part by the Brazilian agencies CAPES and CNPq (scholarship), CNPq (under INCT-Fotonicom project, 574017/2008-9), and FAPESP...
Agradecimentos: The authors thank Professor Adriano Toazza (UPF, RS/Brazil) for the software used to automate the EO transmission measurements. This work was supported in part by the Brazilian agencies CAPES and CNPq (scholarship), CNPq (under INCT-Fotonicom project, 574017/2008-9), and FAPESP (under Padtec and CEPOF projects, 2007/56024-4 and 2005/51689-2)
Abstract: We propose an equivalent circuit modeling for a chip-on-carrier and for two encapsulated semiconductor optical amplifiers (SOAs). The models include main parasitic leaks and were used in reflection and transmission simulations, showing good agreement with experimental data. The model for...
Abstract: We propose an equivalent circuit modeling for a chip-on-carrier and for two encapsulated semiconductor optical amplifiers (SOAs). The models include main parasitic leaks and were used in reflection and transmission simulations, showing good agreement with experimental data. The model for each SOA is validated, comparing the simulated results with experimental data from SOAs operating as high-speed electro-optical switches, reaching rise times below 200 ps
CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ
574017/2008-9
COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES
FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP
2005/51689-2; 2007/56024-4
Fechado
Frequency- and time-domain simulations of semiconductor optical amplifiers using equivalent circuit modeling
Frequency- and time-domain simulations of semiconductor optical amplifiers using equivalent circuit modeling
Fontes
Optical engineering v. 54, n. 11, n. art. 114107, Nov. 2015 |