Agradecimentos: The authors would like to thank the Center for Research and Development in Telecommunications (CPqD) for supporting the experimental setup and would like to personally thank Andrea Chiuchiarelli and Sandro Marcelo Rossi (CPqD) for their contributions to many preliminary stages of...

Agradecimentos: The authors would like to thank the Center for Research and Development in Telecommunications (CPqD) for supporting the experimental setup and would like to personally thank Andrea Chiuchiarelli and Sandro Marcelo Rossi (CPqD) for their contributions to many preliminary stages of this work. This work was supported in part by the São Paulo Research Foundation (FAPESP, Grant Nos. 2017/20121-8, 2015/50063-4, 2015/24517-330 8, and 2007/56024-4), the Coordination of Improvement of Higher Education Personnel (CAPES), and the National Council for Scientific and Technological Development (CNPq, Grant Nos. 301409/2017-0, 159388/2017-1, 400129/2017-5, 402923/2016-2, and 301420/2015-7)

Abstract: Nonlinear phase-drift on 16-QAM optical signals due to semiconductor optical amplifier gain saturation were measured for two devices - a linear and a nonlinear one - considering the input optical power and the net optical gain. The signal when amplified by the nonlinear device is marred...

Abstract: Nonlinear phase-drift on 16-QAM optical signals due to semiconductor optical amplifier gain saturation were measured for two devices - a linear and a nonlinear one - considering the input optical power and the net optical gain. The signal when amplified by the nonlinear device is marred even for low Pin (-20 dBm), and for moderate input powers (-15 dBm) signal quality stays always above the forward error correction (FEC) limit (error vector magnitude = 16 %). The nonlinear device as expected induced more degradation, being able to operate fairly just for small gain and input power; for moderate gain (12 dB), the amplified signals stay always above the FEC limit. The linear device showed fair operation even for moderate Pin = -15 dBm, working under FEC limit for OSNR (at Rx) higher than 16.5 dB for 10 Gbaud, and higher than 20 dB for 25 Gbaud, with small penalties (<2 dB) in relation to the back-to-back configuration

CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ

301420/2015-7; 402923/2016-2; 301409/2017-0; 159388/2017-1; 400129/2017-5

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP

2007/56024-4; 2015/24517-8; 2015/50063-4; 2017/20121-8

COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES

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