Agradecimentos: We acknowledge the financial support from Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq), the Coordenacao de Aperfeicoamento de Pessoal de Ensino Superior (CAPES), the Fundacao de Amparo a Pesquisa do Estado de Goias (FAPEG), Fundacao de Amparo Pesquisa do...

Agradecimentos: We acknowledge the financial support from Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq), the Coordenacao de Aperfeicoamento de Pessoal de Ensino Superior (CAPES), the Fundacao de Amparo a Pesquisa do Estado de Goias (FAPEG), Fundacao de Amparo Pesquisa do Estado de Sao Paulo (FAPESP), and Fundo de Apoio ao Ensino, Pesquisa e Extensao da Universidade Estadual de Campinas (FAEPEX)

Abstract: Single crystals of bismuth tellurite (Bi2TeO5) were grown by a double crucible Czochralski method at different pulling and rotation rates, ranging from 0.1 mm/h to 0.8 mm/h and from 5 rpm to 20 rpm, respectively. The crystallized phase was verified by X-ray diffraction measurements,...

Abstract: Single crystals of bismuth tellurite (Bi2TeO5) were grown by a double crucible Czochralski method at different pulling and rotation rates, ranging from 0.1 mm/h to 0.8 mm/h and from 5 rpm to 20 rpm, respectively. The crystallized phase was verified by X-ray diffraction measurements, occurring structural defects were characterized, and the growth conditions were studied being determined the better parameters to growth good-quality single crystals with uniform pale yellow coloration. Optical band gap of 3.1 eV was determined from the optical transmission spectrum

CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ

COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE GOIÁS - FAPEG

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP

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