This study was designed to evaluate the effects of Oxygen and Argon plasma on gutta-percha surfaces. A total of 185 flat smooth gutta-percha surfaces were used. Samples were divided into groups: control: no plasma treatment; Oxygen: treatment with Oxygen plasma for 1 min; Argon: treatment with Argon...

This study was designed to evaluate the effects of Oxygen and Argon plasma on gutta-percha surfaces. A total of 185 flat smooth gutta-percha surfaces were used. Samples were divided into groups: control: no plasma treatment; Oxygen: treatment with Oxygen plasma for 1 min; Argon: treatment with Argon plasma for 1 min. Samples were evaluated topographically by scanning electron microscopy and atomic force microscopy; and chemically by Fourier Transform-infrared Spectroscopy. A goniometer was used to determine the surface free energy and the wettability of the endodontic sealers. Additionally 60 bovine teeth were filled using pellets of gutta-percha (control, oxygen and argon plasma) and the sealers. Teeth were evaluated by push-out and microleakage tests. Data were statistically analyzed using specific tests. Argon plasma did not change the surface topography, while Oxygen plasma led to changes. Both treatments chemically modified the gutta-percha surface. Argon and Oxygen plasma increased the surface free energy and favored the wettability of AH Plus and Pulp Canal Sealer EWT. Regarding bond strength analysis, for AH Plus sealer, both plasma treatments on gutta-percha favored the bond strength to dentin. However, for Pulp Canal Sealer, there is no statistically significant influence. For leakage test, dye penetration occurred between sealer and dentin in all groups. In conclusion, Oxygen plasma led to both topographic and chemical changes in the gutta-percha surface, while Argon plasma caused only chemical changes. Both treatments increased the surface free energy, favoring the wettability of AH Plus and Pulp Canal Sealer EWT sealers and influenced positively in the adhesion and leakage.

CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ

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