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Type: Artigo de periódico
Title: Erbium in a-Si:H
Author: Tessler, Leandro R.
Abstract: A review of the current status of research on Er 3+ doped hydrogenated amorphous silicon (a-Si:H) is presented. Er has been introduced in a-Si:H and a-SiOx:H by ion implantation, co-sputtering and PECVD. In all cases, the characteristic atomic-like intra-4f 4I13/2 -> 4I15/2 photoluminescence emission at ~ 1.54 µm is observed at room temperature. The Er 3+ luminescence probability is determined by the local neighborhood of the ions. Therefore, local probes like EXAFS and Mössbauer spectroscopy have yielded very important information. A discussion of excitation processes, electroluminescence, and electronic doping effects, is also presented.
Editor: Sociedade Brasileira de Física
Citation: Brazilian Journal of Physics. Sociedade Brasileira de Física, v. 29, n. 4, p. 616-622, 1999.
Rights: aberto
Identifier DOI: 10.1590/S0103-97331999000400003
Date Issue: 1-Dec-1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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