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|Type:||Artigo de periódico|
|Title:||Ultrafast Transient Transport In Nonequilibrium Semiconductors|
|Abstract:||A study of ultrafast transient transport in nonequilibrium direct-gap polar semiconductors under high levels of excitation is presented. The dynamic equation for the drift velocity is derived. A numerical application, appropriate for the case of photoexcited carriers distributed in the zone-center valleys of GaAs, is done. The time evolution of the momentum relaxation time and drift velocity is discussed, and it is shown that, depending on experimental conditions, a velocity overshoot may result. © 1983 The American Physical Society.|
|Citation:||Physical Review B. , v. 27, n. 6, p. 3874 - 3877, 1983.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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