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Type: Artigo de periódico
Title: Ultrafast Transient Transport In Nonequilibrium Semiconductors
Author: Vasconcellos A.R.
Luzzi R.
Abstract: A study of ultrafast transient transport in nonequilibrium direct-gap polar semiconductors under high levels of excitation is presented. The dynamic equation for the drift velocity is derived. A numerical application, appropriate for the case of photoexcited carriers distributed in the zone-center valleys of GaAs, is done. The time evolution of the momentum relaxation time and drift velocity is discussed, and it is shown that, depending on experimental conditions, a velocity overshoot may result. © 1983 The American Physical Society.
Citation: Physical Review B. , v. 27, n. 6, p. 3874 - 3877, 1983.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.27.3874
Date Issue: 1983
Appears in Collections:Unicamp - Artigos e Outros Documentos

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