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dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.typeArtigo de periódicopt_BR
dc.titleNonlinear Transport In Photoexcited Plasma In Semiconductors: Non-ohmic Mobility And A Generalized Einstein Relationpt_BR
dc.contributor.authorVasconcellos A.R.pt_BR
dc.contributor.authorAlgarte A.C.S.pt_BR
dc.contributor.authorLuzzi R.pt_BR
unicamp.authorVasconcellos, A.R., Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, Unicamp, 13083-970 Campinas, Sao Paulo, Brazilpt_BR
unicamp.authorAlgarte, A.C.S., Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, Unicamp, 13083-970 Campinas, Sao Paulo, Brazilpt_BR
unicamp.authorLuzzi, R., Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, Unicamp, 13083-970 Campinas, Sao Paulo, Brazilpt_BR
dc.description.abstractResorting to a theory of responses to thermal and mechanical perturbations, based on statistical irreversible thermodynamics for systems arbitrarily away from equilibrium, we obtain the diffusion and mobility coefficients in a highly photoexcited plasma in semiconductors in the presence of an electric field. They are dependent on the evolution of the nonequilibrium thermodynamic state of the system. From these transport coefficients we derived a generalized Einstein relation for ultrafast transient regimes and for non-Ohmic conditions. In all cases this generalized Einstein law acquires values that are field dependent and larger than those in its original form only valid in steady-state conditions and the limit of weak fields. Numerical results appropriate for the case of a GaAs sample are presented. © 1995 The American Physical Society.en
dc.relation.ispartofPhysical Review Bpt_BR
dc.date.issued1995pt_BR
dc.identifier.citationPhysical Review B. , v. 52, n. 19, p. 13936 - 13945, 1995.pt_BR
dc.language.isoenpt_BR
dc.description.volume52pt_BR
dc.description.issuenumber19pt_BR
dc.description.firstpage13936pt_BR
dc.description.lastpage13945pt_BR
dc.rightsabertopt_BR
dc.sourceScopuspt_BR
dc.identifier.issn1631829pt_BR
dc.identifier.doi10.1103/PhysRevB.52.13936pt_BR
dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-4244209699&partnerID=40&md5=917086fe845908a32af186332ee239f2pt_BR
dc.date.available2015-06-26T17:13:58Z
dc.date.available2015-11-26T14:19:53Z-
dc.date.accessioned2015-06-26T17:13:58Z
dc.date.accessioned2015-11-26T14:19:53Z-
dc.description.provenanceMade available in DSpace on 2015-06-26T17:13:58Z (GMT). No. of bitstreams: 1 2-s2.0-4244209699.pdf: 401498 bytes, checksum: 9e1e1ff4cab3be228ade291478fbc33f (MD5) Previous issue date: 1995en
dc.description.provenanceMade available in DSpace on 2015-11-26T14:19:53Z (GMT). No. of bitstreams: 2 2-s2.0-4244209699.pdf: 401498 bytes, checksum: 9e1e1ff4cab3be228ade291478fbc33f (MD5) 2-s2.0-4244209699.pdf.txt: 40806 bytes, checksum: 3b19d7d6d037abcd71e9cc675311278d (MD5) Previous issue date: 1995en
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/95829
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/95829-
dc.identifier.idScopus2-s2.0-4244209699pt_BR
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