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|Type:||Artigo de periódico|
|Title:||Nitrogen-doped diamond films|
|Abstract:||We found that very high concentrations (up to 20% vol) of nitrogen in the ethanol/hydrogen gas mixture do not prejudice the diamond quality as determined by Raman spectroscopy. Nitrogen addition also increases the diamond growth rate, as was previously reported at low nitrogen concentrations. We observed that after a second heating cycle in air at temperatures between 300 and 673 K the electrical resistance versus temperature curves of the as-grown films presented a bulk semiconductor behavior. This stabilization was due to the oxidation of the as-grown hydrogenated surface. The electrical ionization energy E-d was found to be in the range of 1.62-1.90 eV corresponding to films produced with 0 to 20% vol nitrogen in the feed. The room temperature photoluminescence spectra of films produced at low nitrogen concentration suggest that E-d results from pure electronic transitions in the nitrogen-vacancy neutral defects; for samples produced with nitrogen concentrations in the range 15-20% vol the E-d values may be due to, among others, GR1 'vibronic' transitions and charged nitrogen-vacancy defects. (C) 1999 American Institute of Physics. [S0021-8979(99)01710-7].|
|Editor:||Amer Inst Physics|
|Citation:||Journal Of Applied Physics. Amer Inst Physics, v. 85, n. 10, n. 7455, n. 7458, 1999.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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