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dc.contributor.CRUESPUniversidade Estadual de Campinaspt_BR
dc.typeArtigo de periódicopt_BR
dc.titleMagnetic and transport properties in ordered arrays of permalloy antidots and thin filmspt_BR
dc.contributor.authorConfalonieri, GABpt_BR
dc.contributor.authorPirota, KRpt_BR
dc.contributor.authorVazquez, Mpt_BR
dc.contributor.authorNemes, NMpt_BR
dc.contributor.authorGarcia-Hernandez, Mpt_BR
dc.contributor.authorKnobel, Mpt_BR
dc.contributor.authorBatallan, Fpt_BR
unicamp.author.emailgabadinic@yahoo.compt_BR
unicamp.authorBadini Confalonieri, G. A. Vazquez, M. Nemes, N. M. Garcia-Hernandez, M. Batallan, F. Inst Ciencia Mat Madrid, Madrid 28049, Spainpt_BR
unicamp.authorPirota, K. R. Knobel, M. Univ Estadual Campinas, Gleb Wataghin IFGW, BR-13083970 Campinas, SP, Brazilpt_BR
dc.subject.wosFabricationpt_BR
dc.subject.wosAnisotropypt_BR
dc.subject.wosNanostructurespt_BR
dc.subject.wosAluminapt_BR
dc.description.abstractThe magnetotransport behaviors of two types of permalloy nanostructures, thin films and antidots, are presented and discussed. Antidots samples were prepared by sputtering a Ni(80)Fe(20) layer on top of a nanoporous alumina membrane. A counterpart continuous thin film grown on a continuous Si substrate was also prepared. The magnetoresistance (MR) was measured both as a function of the external applied magnetic field and of the angular orientation, and thus compared with the magnetization curves. The introduction of antidots is found to reduce the anisotropic MR and the angular dependence of the MR, simultaneously increasing the coercive field of the samples. The influence of the sample geometry on the perpendicular MR behavior is reported and discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3383039]pt
dc.relation.ispartofJournal Of Applied Physicspt_BR
dc.relation.ispartofabbreviationJ. Appl. Phys.pt_BR
dc.publisher.cityMelvillept_BR
dc.publisher.countryEUApt_BR
dc.publisherAmer Inst Physicspt_BR
dc.date.issued2010pt_BR
dc.date.monthofcirculationAPR 15pt_BR
dc.identifier.citationJournal Of Applied Physics. Amer Inst Physics, v. 107, n. 8, 2010.pt_BR
dc.language.isoenpt_BR
dc.description.volume107pt_BR
dc.description.issuenumber8pt_BR
dc.rightsabertopt_BR
dc.sourceWeb of Sciencept_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.wosidWOS:000277303200073pt_BR
dc.identifier.doi10.1063/1.3383039pt_BR
dc.date.available2014-11-14T12:44:22Z
dc.date.available2015-11-26T17:15:03Z-
dc.date.accessioned2014-11-14T12:44:22Z
dc.date.accessioned2015-11-26T17:15:03Z-
dc.description.provenanceMade available in DSpace on 2014-11-14T12:44:22Z (GMT). No. of bitstreams: 1 WOS000277303200073.pdf: 667183 bytes, checksum: bc2303ed45fda00f12514eeb1ea2cb97 (MD5) Previous issue date: 2010en
dc.description.provenanceMade available in DSpace on 2015-11-26T17:15:03Z (GMT). No. of bitstreams: 2 WOS000277303200073.pdf: 667183 bytes, checksum: bc2303ed45fda00f12514eeb1ea2cb97 (MD5) WOS000277303200073.pdf.txt: 21131 bytes, checksum: e9617c0f00b9a4e0ac22876434f16af0 (MD5) Previous issue date: 2010en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/81390pt_BR
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/81390
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/81390-
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