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Type: Artigo de periódico
Title: Light controlled spin polarization in asymmetric n-type resonant tunneling diode
Author: Dos Santos, LF
Gobato, YG
Marques, GE
Brasil, MJSP
Henini, M
Airey, R
Abstract: The authors have observed a strong dependence of the circular polarization degree from the quantum well emission in an asymmetric n-type GaAs/AlAs/AlGaAs resonant tunneling diode on both the laser excitation intensity and the applied bias voltage. The sign of the circular polarization can be reversed by increasing the light excitation intensity when the structure is biased with voltages slightly larger than the first electron resonance. The variation of polarization is associated with a large density of photogenerated holes accumulated in the quantum well, which is enhanced due to the asymmetry of the structure. (C) 2007 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Citation: Applied Physics Letters. Amer Inst Physics, v. 91, n. 7, 2007.
Rights: aberto
Identifier DOI: 10.1063/1.2772662
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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