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dc.contributor.CRUESPUniversidade Estadual de Campinaspt_BR
dc.typeArtigo de periódicopt_BR
dc.titleStrain relaxation and stress-driven interdiffusion in InAs/InGaAs/InP nanowirespt_BR
dc.contributor.authorNieto, Lpt_BR
dc.contributor.authorBortoleto, JRRpt_BR
dc.contributor.authorCotta, MApt_BR
dc.contributor.authorMagalhaes-Paniago, Rpt_BR
dc.contributor.authorGutierrez, HRpt_BR
unicamp.author.emailmonica@ifi.unicamp.brpt_BR
unicamp.authorUniv Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil Penn State Univ, Dept Phys, University Pk, PA 16802 USApt_BR
dc.subject.wosX-ray-diffractionpt_BR
dc.subject.wosQuantum Dotspt_BR
dc.subject.wosNanostructurespt_BR
dc.subject.wosExchangept_BR
dc.subject.wosSystemspt_BR
dc.subject.wosLayerspt_BR
dc.subject.wosWirespt_BR
dc.description.abstractThe authors have investigated strain relaxation in InAs/InGaAs/InP nanowires (NW's). Transmission electron microscopy images show an additional stress field attributed to compositional modulation in the ternary layer, which disrupts NW formation and drives Ga interdiffusion into InAs, according to grazing incidence x-Ray diffraction under anomalous scattering conditions. The strain profile along the NW, however, is not significantly affected when interdiffusion is considered. Results show that the InAs NW energetic stability is preserved with the introduction of ternary buffer layer in the structure. (c) 2007 American Institute of Physics.pt
dc.relation.ispartofApplied Physics Letterspt_BR
dc.relation.ispartofabbreviationAppl. Phys. Lett.pt_BR
dc.publisher.cityMelvillept_BR
dc.publisher.countryEUApt_BR
dc.publisherAmer Inst Physicspt_BR
dc.date.issued2007pt_BR
dc.date.monthofcirculationAUG 6pt_BR
dc.identifier.citationApplied Physics Letters. Amer Inst Physics, v. 91, n. 6, 2007.pt_BR
dc.language.isoenpt_BR
dc.description.volume91pt_BR
dc.description.issuenumber6pt_BR
dc.rightsabertopt_BR
dc.sourceWeb of Sciencept_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.wosidWOS:000248661400128pt_BR
dc.identifier.doi10.1063/1.2764446pt_BR
dc.date.available2014-11-19T04:51:08Z
dc.date.available2015-11-26T17:57:36Z-
dc.date.accessioned2014-11-19T04:51:08Z
dc.date.accessioned2015-11-26T17:57:36Z-
dc.description.provenanceMade available in DSpace on 2014-11-19T04:51:08Z (GMT). No. of bitstreams: 1 WOS000248661400128.pdf: 563005 bytes, checksum: 49bbd9bf0c24f1ca139e045c533caab0 (MD5) Previous issue date: 2007en
dc.description.provenanceMade available in DSpace on 2015-11-26T17:57:36Z (GMT). No. of bitstreams: 2 WOS000248661400128.pdf: 563005 bytes, checksum: 49bbd9bf0c24f1ca139e045c533caab0 (MD5) WOS000248661400128.pdf.txt: 17044 bytes, checksum: 121c2566e82a075c6592cef8ded49b17 (MD5) Previous issue date: 2007en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/75150pt_BR
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/75150
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/75150-
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