Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/73312
Type: Artigo
Title: Upper bound for the amplitude of CDW's in highly excited GaAs and InGaAsP
Author: Borba, G.L.
Prince, F.C.
Patel, N.
Castro, A.R.B. de
Abstract: We measured, as a function of position along the stripe, the intensity of luminescence emitted normally to the junction plane in GaAs/GaAlAs and InGaAsP/InP LED's. We set an upper bound p=0.1 for the depth of modulation in the carrier density under highly excited conditions such that the non-equilibrium carrier density and effective temperature exceed the threshold and enter the domain where formation of CDW's is possible.
Subject: Luminescência
Ondas de densidade de carga
Country: Inglaterra
Editor: Pergamon-Elsevier
Citation: Solid State Communications. Pergamon-elsevier Science Ltd, v. 55, n. 4, n. 321, n. 325, 1985.
Rights: fechado
Identifier DOI: 10.1016/0038-1098(85)90617-9
Address: https://www.sciencedirect.com/science/article/pii/0038109885906179?via%3Dihub
Date Issue: 1985
Appears in Collections:IFGW - Artigos e Outros Documentos

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