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|Type:||Artigo de periódico|
|Title:||X-ray diffraction mapping of strain fields and chemical composition of SiGe : Si(001) quantum dot molecules|
|Abstract:||A variety of surface morphologies can be formed by controlling kinetic parameters during heteroepitaxial film growth. The system reported is a Si0.7Ge0.3 film grown by molecular beam epitaxy at 550 degrees C and a 1 A/s deposition rate, producing quantum dot molecule (QDM) structures. These nanostructures are very uniform in size and shape, allowing strain mapping and chemical composition evaluation by means of anomalous x-ray diffraction in a grazing incidence geometry. Tensile and compressed regions coexist inside QDMs, in accordance with the finite-element calculations of lattice relaxation. The Ge content was found to vary significantly within the structures, and to be quite different from the nominal composition.|
|Editor:||American Physical Soc|
|Citation:||Physical Review B. American Physical Soc, v. 73, n. 12, 2006.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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