Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: X-ray diffraction mapping of strain fields and chemical composition of SiGe : Si(001) quantum dot molecules
Author: Leite, MS
Gray, JL
Hull, R
Floro, JA
Magalhaes-Paniago, R
Medeiros-Ribeiro, G
Abstract: A variety of surface morphologies can be formed by controlling kinetic parameters during heteroepitaxial film growth. The system reported is a Si0.7Ge0.3 film grown by molecular beam epitaxy at 550 degrees C and a 1 A/s deposition rate, producing quantum dot molecule (QDM) structures. These nanostructures are very uniform in size and shape, allowing strain mapping and chemical composition evaluation by means of anomalous x-ray diffraction in a grazing incidence geometry. Tensile and compressed regions coexist inside QDMs, in accordance with the finite-element calculations of lattice relaxation. The Ge content was found to vary significantly within the structures, and to be quite different from the nominal composition.
Country: EUA
Editor: American Physical Soc
Citation: Physical Review B. American Physical Soc, v. 73, n. 12, 2006.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.73.121308
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000236467400013.pdf506.71 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.