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Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/72174
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dc.contributor.CRUESPUniversidade Estadual de Campinaspt_BR
dc.typeArtigo de periódicopt_BR
dc.titleSpin injection in n-type resonant tunneling diodespt_BR
dc.contributor.authorGordo, VOpt_BR
dc.contributor.authorHerval, LKSpt_BR
dc.contributor.authorGaleti, HVApt_BR
dc.contributor.authorGobato, YGpt_BR
dc.contributor.authorBrasil, MJSPpt_BR
dc.contributor.authorMarques, GEpt_BR
dc.contributor.authorHenini, Mpt_BR
dc.contributor.authorAirey, RJpt_BR
unicamp.author.emailyara@df.ufscar.brpt_BR
unicamp.authorGordo, Vanessa Orsi Herval, Leonilson K. S. Galeti, Helder V. A. Gobato, Yara Galvao Marques, Gilmar E. Univ Fed Sao Carlos, Dept Phys, BR-13565905 Sao Carlos, SP, Brazilpt_BR
unicamp.authorBrasil, Maria J. S. P. Univ Estadual Campinas, Gleb Wataghin Phys Inst, BR-13083970 Campinas, SP, Brazilpt_BR
unicamp.authorHenini, Mohamed Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, Englandpt_BR
unicamp.authorAirey, Robert J. Univ Sheffield, Dept Elect & Elect Engn, Sheffield S10 2TN, S Yorkshire, Englandpt_BR
dc.subjectSpintronicspt_BR
dc.subjectnanostructurept_BR
dc.subjectresonant tunneling diodept_BR
dc.subjectphotoluminescencept_BR
dc.subject.wosCharged Excitonspt_BR
dc.subject.wosHeterojunctionspt_BR
dc.subject.wosMagnetoopticspt_BR
dc.description.abstractWe have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.pt
dc.relation.ispartofNanoscale Research Letterspt_BR
dc.relation.ispartofabbreviationNanoscale Res. Lett.pt_BR
dc.publisher.cityNew Yorkpt_BR
dc.publisher.countryEUApt_BR
dc.publisherSpringerpt_BR
dc.date.issued2012pt_BR
dc.date.monthofcirculationOCT 25pt_BR
dc.identifier.citationNanoscale Research Letters. Springer, v. 7, 2012.pt_BR
dc.language.isoenpt_BR
dc.description.volume7pt_BR
dc.rightsabertopt_BR
dc.rights.licensehttp://www.springer.com/open+access/authors+rights?SGWID=0-176704-12-683201-0pt_BR
dc.sourceWeb of Sciencept_BR
dc.identifier.issn1931-7573pt_BR
dc.identifier.wosidWOS:000311786600001pt_BR
dc.identifier.doi10.1186/1556-276X-7-592pt_BR
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)pt_BR
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.description.sponsorshipUK Engineering and Physical Sciences Research Councilpt_BR
dc.description.sponsorship1Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorship1Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)pt_BR
dc.description.sponsorship1Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.date.available2014-07-30T18:43:50Z
dc.date.available2015-11-26T17:02:49Z-
dc.date.accessioned2014-07-30T18:43:50Z
dc.date.accessioned2015-11-26T17:02:49Z-
dc.description.provenanceMade available in DSpace on 2014-07-30T18:43:50Z (GMT). No. of bitstreams: 0 Previous issue date: 2012en
dc.description.provenanceMade available in DSpace on 2015-11-26T17:02:49Z (GMT). No. of bitstreams: 2 WOS000311786600001.pdf: 261695 bytes, checksum: f3a5e2cc83a921b1bde5ed8a4fe9e06b (MD5) WOS000311786600001.pdf.txt: 23987 bytes, checksum: 3dcc8efb8a75993e48aaab23f444b9d5 (MD5) Previous issue date: 2012en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/72174
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/72174-
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