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|Type:||Artigo de periódico|
|Title:||Properties of GaAs/InGaAs Quantum-Size Structures Containing delta < Mn >-Doped Layers|
|Abstract:||Properties of structures containing an InGaAs quantum well (QW) or InAs quantum dots (QDs) as well as delta < C >- and delta < Mn >-doped layers are investigated. Most of these structures are fabricated by the MOCVD epitaxy method; delta < Mn >-doped layers are obtained by low-temperature laser deposition directly in the epitaxial reactor. The structures under study exhibit three conduction channels: the delta < Mn >-doped layer, delta < Mn >-doped layer, and QW or wetting layer in the case of QDs. The contribution of each channel into the total conduction depend on the measurement temperature. Photoluminescence of the structures as a function of thickness of delta < Mn >-doped layer is studied.|
|Citation:||Journal Of Surface Investigation-x-ray Synchrotron And Neutron Techniques. Maik Nauka/interperiodica/springer, v. 1, n. 1, n. 64, n. 66, 2007.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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