Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||On the optical properties of InAs/InP systems: The role of two-dimensional structures and three-dimensional islands|
|Abstract:||We investigate the effects of the interface morphology on the electronic properties of InAs/In systems using in-air atomic force microscopy and low temperature photoluminescence. Atomic force microscopy results show that the distribution of InAs strained film into three-dimensional islands and the two-dimensional wetting layer-typical of the Stranski-Krastanov growth mode-is strongly affected by the characteristics of the substrate and by the morphology of the InP buffer layer. The differences in the optical data are correlated to the different interface characteristics observed by atomic force microscopy. We discuss the origin of emission peaks taking into account the diffusion process of adsorbed atoms on the different types of surface. (C) 1998 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Citation:||Applied Physics Letters. Amer Inst Physics, v. 72, n. 9, n. 1015, n. 1017, 1998.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.