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|Type:||Artigo de periódico|
|Title:||Field-emission properties of macroporous silicon grown at high anodization voltages|
|Abstract:||In this work, the electron field emission properties, photoluminescence, and structure of porous silicon emitters as a function of the anodizing voltages have been studied. Morphological features, such as sharp nanometer-scale tip geometries, or micrometer-scale asperities, and large hexagonlike porosity, have been observed in porous silicon using atomic force microscopy for samples prepared at low or high anodization voltages, respectively. Threshold fields for electron emission of 16.6 V mum(-1) and of 11.4 V mum(-1) have been obtained for samples prepared at anodizing voltages of 10 V and 150 V, respectively, which are close to values required for technological applications. Possible mechanisms of field enhancement are discussed. (C) 2005 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Citation:||Journal Of Applied Physics. Amer Inst Physics, v. 97, n. 1, 2005.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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