Electronic structure of holes in modulation doped p-Si1-xGex/Si strained quantum wells in a magnetic field

Abstract

The results of self-consistent calculations of hole energy levels in strained, symmetric and asymmetric, p-type modulation doped Si1-xGex/Si quantum wells in a magnetic field are reported. The band mixing is responsible for the enhanced effective g-factor of the opposite parity states. This leads to gaps at predominantly odd filling factors. The calculated filling factor dependent energy gaps are compared with gaps obtained from magneto-transport measurements. (C) 1997 Published by Elsevier Science Ltd.