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|Type:||Artigo de periódico|
|Title:||Effect of MnAs/GaAs(001) film accommodations on the phase-transition temperature|
|Abstract:||The phase-transition temperature of MnAs epitaxial films grown by molecular-beam epitaxy on GaAs(001) with different crystalline accommodations was studied by specular and grazing incidence x-ray diffraction. The transition temperature of MnAs films with tilted hexagonal c-axis orientations with respect to the GaAs substrate is higher than the most investigated nontilted films and reaches a value above room temperature, which is more suitable for device applications. (C) 2004 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Citation:||Applied Physics Letters. Amer Inst Physics, v. 85, n. 12, n. 2250, n. 2252, 2004.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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