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Type: Artigo de periódico
Title: Driving-dependent damping of rabi oscillations in two-level semiconductor systems
Author: Mogilevtsev, D
Nisovtsev, AP
Kilin, S
Cavalcanti, SB
Brandi, HS
Oliveira, LE
Abstract: We propose a mechanism to explain the nature of the damping of Rabi oscillations with an increasing driving-pulse area in localized semiconductor systems and have suggested a general approach which describes a coherently driven two-level system interacting with a dephasing reservoir. Present calculations show that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Moreover, we have shown that the damping of Rabi oscillations might occur as a result of different dephasing mechanisms for both stationary and nonstationary effects due to coupling to the environment. Present calculated results are found in quite good agreement with available experimental measurements.
Country: EUA
Editor: Amer Physical Soc
Citation: Physical Review Letters. Amer Physical Soc, v. 100, n. 1, 2008.
Rights: aberto
Identifier DOI: 10.1103/PhysRevLett.100.017401
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

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