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|Type:||Artigo de periódico|
|Title:||Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields|
|Abstract:||The effects of a laser field on the conduction-electron effective Lande g factor in GaAs-Ga1-xAlxAs quantum wells and quantum-well wires under applied magnetic fields are studied within the effective-mass approximation. The interaction between the laser field and the semiconductor heterostructure is taken into account via a renormalization of the semiconductor energy gap and conduction-electron effective mass. Calculations are performed for the conduction-electron Lande factor and g-factor anisotropy by considering the non-parabolicity and anisotropy of the conduction band. Theoretical results are obtained as functions of the laser intensity, detuning and geometrical parameters of the low-dimensional semiconductor heterostructures, and indicate the possibility of manipulating and tuning the conduction-electron g factor in heterostructures by changing the detuning and laser-field intensity.|
|Editor:||Iop Publishing Ltd|
|Citation:||Journal Of Physics D-applied Physics. Iop Publishing Ltd, v. 42, n. 11, 2009.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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