Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Laser effects on donor states in low-dimensional semiconductor heterostructures
Author: Brandi, HS
Latge, A
Oliveira, LE
Abstract: A theoretical study of the effects of intense laser fields on the ground-state binding energies of donor impurities in low-dimensional semiconductor heterostructures is performed. The laser-heterostructure interaction is treated within an extended dressed-atom approach, so that, for a laser tuned far below any resonances, the effects of the laser-semiconductor interaction correspond to a renormalization of the semiconductor energy gap and conduction/valence effective masses. Calculations are performed for donors in GaAs-(Ga,Al)As quantum wells, cylindrical quantum-well wires, and spherical quantum dots. The binding energies of donors in low-dimensional systems increase with increasing laser intensity, and for a fixed intensity, the influence of the laser is stronger for small detunings. Results obtained within the extended dressed-atom approach are compared with previous calculations performed by using a simplified high-frequency limit of the Kramers-Henneberger approach.
Country: EUA
Editor: American Physical Soc
Citation: Physical Review B. American Physical Soc, v. 70, n. 15, 2004.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.70.153303
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000224855900010.pdf51 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.