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|Type:||Artigo de periódico|
|Title:||Laser effects on donor states in low-dimensional semiconductor heterostructures|
|Abstract:||A theoretical study of the effects of intense laser fields on the ground-state binding energies of donor impurities in low-dimensional semiconductor heterostructures is performed. The laser-heterostructure interaction is treated within an extended dressed-atom approach, so that, for a laser tuned far below any resonances, the effects of the laser-semiconductor interaction correspond to a renormalization of the semiconductor energy gap and conduction/valence effective masses. Calculations are performed for donors in GaAs-(Ga,Al)As quantum wells, cylindrical quantum-well wires, and spherical quantum dots. The binding energies of donors in low-dimensional systems increase with increasing laser intensity, and for a fixed intensity, the influence of the laser is stronger for small detunings. Results obtained within the extended dressed-atom approach are compared with previous calculations performed by using a simplified high-frequency limit of the Kramers-Henneberger approach.|
|Editor:||American Physical Soc|
|Citation:||Physical Review B. American Physical Soc, v. 70, n. 15, 2004.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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