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Type: Artigo de periódico
Title: Laser dressing effects in low-dimensional semiconductor systems
Author: Brandi, HS
Latge, A
Oliveira, LE
Abstract: A study of the effects of a laser field on the energy spectra of low-dimensional GaAs-(Ga,Al)As semiconductor systems is presented by using a Kane band-structure model for the GaAs bulk semiconductor. For a laser tuned far below any resonances, the effects of the laser-semiconductor interaction correspond to a renormalization or dressing of the semiconductor energy gap and conduction/valence effective masses. This renormalized approach may be used to give an adequate indication of the laser effects on any semiconductor heterostructures for which the effective-mass approximation provides a good physical description. As an application, it is shown that dressing effects on the donor and exciton peak energies in quantum-well heterostructures may be quite considerable and readily observable. (C) 2000 Elsevier Science Ltd. All rights reserved.
Subject: semiconductors
impurities semiconductors
optical properties
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Citation: Solid State Communications. Pergamon-elsevier Science Ltd, v. 117, n. 2, n. 83, n. 87, 2000.
Rights: fechado
Identifier DOI: 10.1016/S0038-1098(00)00429-4
Date Issue: 2000
Appears in Collections:Unicamp - Artigos e Outros Documentos

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