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|Type:||Artigo de periódico|
|Title:||Compensation effect on the CW spin-polarization degree of Mn-based structures|
|Abstract:||We investigated the effects of Mn ions on the spin dynamics of electrons confined in a semiconductor quantum well nearby a Mn-based ferromagnetic layer. Circularly polarized Hanle and time-resolved photoluminescence (PL) measurements were carried out on a set of samples with different Mn delta-doping concentrations. We observe a strong influence of the Mn layer for both the electron lifetime and its spin-relaxation time for high-Mn concentrations, when the electrons significantly overlap with Mn ions. Our results also show that the circular-polarization degree obtained by simple continuous-wave PL measurements is not sufficient to determine the relaxation dynamics due to a compensation effect of the lifetime and the spin-relaxation time.|
|Editor:||Iop Publishing Ltd|
|Citation:||Journal Of Physics D-applied Physics. Iop Publishing Ltd, v. 46, n. 21, 2013.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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