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PreviewIssue DateTitleAuthor(s)AdvisorType
2004Mechanisms Of Silicon Nitride Etching By Electron Cyclotron Resonance Plasmas Using Sf6- And Nf3-based Gas MixturesReyes-Betanzo C.; Moshkalyov S.A.; Ramos A.C.S.; Swart J.W.-Artigo de evento
2004High Performance Active Pixel Sensors Fabricated In A Standard 2.0 μm Cmos TechnologyMestanza S.N.M.; Jimenez H.G.; IFSilva; Diniz J.A.; Doi I.; Swart J.W.-Artigo de evento
2004Grabado Anisotrópico De Silicio Para Aplicación En Micromaquinado Usando Plasmas De Sf6/ch4/o2/ar Y Sf6/cf4/o2/arReyes-Betanzo C.; Moshkalyov S.A.; Swart J.W.-Artigo de periódico
2004Study Of Carbon Nanotubes Growth By Atmospheric Pressure Chemical Vapor DepositionVerissimo C.; Moshkalyov S.A.; Ramos A.C.S.; Goncalves J.L.; Leon J.; Swart J.W.-Artigo de evento
2004Suspended Membranes Made By Silicon Nitride Deposited By Ecr-cvdBiasotto C.; Monte B.; Neli R.R.; Ramos A.C.S.; Diniz I.A.; Moshkalyov S.A.; Doi I.; Swart J.W.-Artigo de evento
2004Control Of Micron And Submicron Feature Dimensions In 2μm Resolution Photolithographic System For Mos And Mems ApplicationsFioravante Jr. N.P.; Manera L.T.; Moshkalyov S.A.; Diniz J.A.; Tatsch P.J.; Grades H.R.J.; Doi I.; Swart J.W.-Artigo de evento
2004Use Of A Langmuir Probe For Ecr Plasma CharacterizationDaltrini A.M.; Moshkalyov S.A.; Ramos A.C.S.; Swart J.W.-Artigo de evento
2004Silicon Oxynitride Gate-dielectric Made By Ecr Plasma OxynitridationManera G.A.; Diniz J.A.; Moshkalyov S.A.; Doi I.; Swart J.W.-Artigo de evento
2004Uncooled Thermal Infrared Detector For Detection Of Far-infrared RadiationNeli R.R.; Doi I.; Melo A.M.; Arbex C.J.N.; Zakia M.B.P.; Kaufmann P.; Diniz J.A.; Swart J.W.-Artigo de evento
2004High Sensitivity Obtained By Three-color Detector Aps-cmos Using Antireflective CoatingMestanza S.N.M.; Biasotto C.; Costa A.C.; Dias G.O.; Doi I.; Diniz J.A.; Swart J.W.-Artigo de evento