Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/337783
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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.contributor.authorunicampCamargo, Bruno Curypt_BR
dc.contributor.authorunicampSilva, Robson Ricardo dapt_BR
dc.contributor.authorunicampKopelevitch, Iakov Veniaminovitchpt_BR
dc.typeArtigopt_BR
dc.titleElectronic transport and Raman spectroscopy characterization in ion-implanted highly oriented pyrolytic graphitept_BR
dc.contributor.authorJesus, R. F. dept_BR
dc.contributor.authorTuratti, A. M.pt_BR
dc.contributor.authorCamargo, B. C.pt_BR
dc.contributor.authorSilva, R. R. dapt_BR
dc.contributor.authorKopelevich, Y.pt_BR
dc.contributor.authorBehar, M.pt_BR
dc.contributor.authorBalzaretti, N. M.pt_BR
dc.contributor.authorGusmao, M. A.pt_BR
dc.contributor.authorPureur, P.pt_BR
dc.subjectGrafitept_BR
dc.subjectImplantação iônicapt_BR
dc.subjectRaman, Efeito dept_BR
dc.subjectMagnetoresistênciapt_BR
dc.subjectOscilaçõespt_BR
dc.subjectGraffitipt_BR
dc.subjectIon implantationpt_BR
dc.subjectRaman effectpt_BR
dc.subjectMagnetoresistancept_BR
dc.subjectOscillationspt_BR
dc.description.abstractWe report on Raman spectroscopy, temperature-dependent in-plane resistivity, and in-plane magnetoresistance experiments in highly oriented pyrolytic graphite (HOPG) implanted with As and Mn. A pristine sample was also studied for comparison. Two different fluences were applied, and . The implantations were carried out with 20 keV ion energy at room temperature. The Raman spectroscopy results reveal the occurrence of drastic changes of the HOPG surface as a consequence of the damage caused by ionic implantation. For the higher dose, the complete amorphization limit is attained. The resistivity and magnetoresistance results were obtained placing electrical contacts on the irradiated sample surface. Owing to the strong anisotropy of HOPG, the electrical current propagates mostly near the implanted surface. Shubnikov-de Haas (SdH) oscillations were observed in the magnetoresistance at low temperatures. These results allow the extraction of the fundamental SdH frequencies and the carriers' effective masses. In general, the resistivity and magnetoresistance results are consistent with those obtained from Raman measurements. However, one must consider that the electrical conduction in our samples occurs as in a parallel association of a largely resistive thin sheet at the surface strongly modified by disorder with a thicker layer where damage produced by implantation is less severe. The SdH oscillations do not hint to significant changes in the carrier density of HOPG.pt_BR
dc.relation.ispartofJournal of low temperature physicspt_BR
dc.relation.ispartofabbreviationJ. low temp. phys.pt_BR
dc.publisher.cityNew York, NYpt_BR
dc.publisher.countryEstados Unidospt_BR
dc.publisherSpringerpt_BR
dc.date.issued2018pt_BR
dc.date.monthofcirculationFeb.pt_BR
dc.language.isoengpt_BR
dc.description.volume190pt_BR
dc.description.issuenumber03-04pt_BR
dc.description.issuespecialpt_BR
dc.description.firstpage141pt_BR
dc.description.lastpage153pt_BR
dc.rightsfechadopt_BR
dc.sourceWOSpt_BR
dc.identifier.issn0022-2291pt_BR
dc.identifier.eissn1573-7357pt_BR
dc.identifier.doi10.1007/s10909-017-1825-8pt_BR
dc.identifier.urlhttps://link.springer.com/article/10.1007%2Fs10909-017-1825-8pt_BR
dc.description.sponsorshippt_BR
dc.description.sponsorship1pt_BR
dc.description.sponsordocumentnumberpt_BR
dc.date.available2020-03-30T18:45:04Z-
dc.date.accessioned2020-03-30T18:45:04Z-
dc.description.provenanceMade available in DSpace on 2020-03-30T18:45:04Z (GMT). No. of bitstreams: 0 Previous issue date: 2018. Added 1 bitstream(s) on 2020-04-27T20:06:34Z : No. of bitstreams: 1 000419168700003.pdf: 1458413 bytes, checksum: e604879bcb7db85fb7346e3a3af88177 (MD5) Bitstreams deleted on 2020-04-28T12:18:55Z: 000419168700003.pdf,. Added 1 bitstream(s) on 2020-04-28T12:23:58Z : No. of bitstreams: 1 000419168700003.pdf: 1516376 bytes, checksum: 7761facd9a1e6f550d60a27966105293 (MD5)en
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/337783-
dc.contributor.departmentDepartamento de Física Aplicadapt_BR
dc.contributor.departmentDepartamento de Física Aplicadapt_BR
dc.contributor.departmentDepartamento de Física Aplicadapt_BR
dc.contributor.unidadeInstituto de Física Gleb Wataghinpt_BR
dc.contributor.unidadeInstituto de Física Gleb Wataghinpt_BR
dc.contributor.unidadeInstituto de Física Gleb Wataghinpt_BR
dc.subject.keywordShubnikov-de Haas oscillationspt_BR
dc.identifier.source000419168700003pt_BR
dc.creator.orcid0000-0002-5172-846Xpt_BR
dc.creator.orcid0000-0001-5954-9709pt_BR
dc.creator.orcid0000-0002-0831-6769pt_BR
dc.type.formArtigopt_BR
dc.identifier.articleidpt_BR
dc.description.sponsorNotept_BR
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