Browsing by Author Swart, JW

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PreviewIssue DateTitleAuthor(s)AdvisorType
2003Silicon nitride etching in high- and low-density plasmas using SF(6)/O(2)/N(2) mixturesReyes-Betanzo, C; Moshkalyov, SA; Swart, JW; Ramos, ACS-Artigo de periódico
2002Study of conditions for anisotropic plasma etching of tungsten and tungsten nitride using SF6/Ar gas mixturesReyes-Betanzo, C; Moshkalyov, SA; Ramos, AC; Diniz, JA; Swart, JW-Artigo de periódico
2008Controlled Deposition and Electrical Characterization of Multi-Wall Carbon NanotubesMoshkalev, SA; Leon, J; Verissimo, C; Vaz, AR; Flacker, A; de Moraes, MB; Swart, JW-Artigo de periódico
2006Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTsZoccal, LB; Diniz, JA; Doi, I; Swart, JW; Daltrini, AM; Moshkalyov, SA-Artigo de periódico
2007Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrixMestanza, SNM; Doi, I; Swart, JW; Frateschi, NC-Artigo de periódico
2009Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etchingFischer, C; Menezes, JW; Moshkalev, SA; Verissimo, C; Vaz, AR; Swart, JW-Artigo de periódico
2008Characterization of Silicon Rich Oxides with Tunable Optical Band Gap on Sapphire Substrates by Photoluminescence, UV/Vis and Raman SpectroscopyKiebach, R; Luna-Lopez, JA; Dias, GO; Aceves-Mijares, M; Swart, JW-Artigo de periódico
1998Education on microfabrication in Latin America and the microelectronics workshop at UNICAMPSwart, JW-Artigo de periódico
1999Influence of the substrate thickness and radio frequency on the deposition rate of amorphous hydrogenated carbon a-C : H filmsBalachova, OV; Alves, MAR; Swart, JW; Braga, ES; Cescato, L-Artigo de periódico
2004Anisotropic etching of silicon for a micromachining application using plasmas of SF6/CH4/O-2/Ar and SF6/CF4/O-2/ArReyes-Betanzo, C; Moshkalyov, SA; Swart, JW-Artigo de periódico
2008Layout techniques for radiation hardening of standard CMOS active pixel sensorsBraga, LHC; Domingues, S; Rocha, MF; Sa, LB; Campos, FS; Santos, FV; Mesquita, AC; Silva, MV; Swart, JW-Artigo de periódico
2006Characterization and modeling of antireflective coatings of SiO2, Si3N4, and SiOxNy deposited by electron cyclotron resonance enhanced plasma chemical vapor depositionMestanza, SNM; Obrador, MP; Rodriguez, E; Biasotto, C; Doi, I; Diniz, JA; Swart, JW-Artigo de periódico
1996Rapid thermal annealing of Mg+ and P+ co-implanted GaAsdeSouza, JP; Boudinov, H; Swart, JW-Artigo de periódico
1998Inductively coupled plasma etching of In-based compound semiconductors in CH4/H-2/ArDiniz, JA; Swart, JW; Jung, KB; Hong, J; Pearton, SJ-Artigo de periódico
2001Permittivity of amorphous hydrogenated carbon (alpha-C : H) films as a function of thermal annealingBalachova, OV; Swart, JW; Braga, ES; Cescato, L-Artigo de periódico
2013Photodetection With Gate-Controlled Lateral BJTs from Standard CMOS TechnologyCampos, FD; Faramarzpour, N; Marinov, O; Deen, MJ; Swart, JW-Artigo de periódico
2004IonRock: software for solving strain gradients of ion-implanted semiconductors by X-ray diffraction measurements and evolutionary programmingBleicher, L; Sasaki, JM; Orloski, RV; Cardoso, LP; Hayashi, MA; Swart, JW-Artigo de periódico
2000CF4 plasma etching of materials used in microelectronics manufacturingBalachova, OV; Alves, MAR; Swart, JW; Braga, ES; Cescato, L-Artigo de periódico
2000MSM photodetector with an integrated microlens array for improved optical couplingOzelo, HFB; de Barros, LEM; Nabet, B; Neto, LG; Romero, MA; Ramos, ACS; Swart, JW-Artigo de periódico
2005Photoluminescence and the Raman scattering in porous GaSb produced by ion implantationDanilov, YA; Biryukov, AA; Goncalves, JL; Swart, JW; Iikawa, F; Teschke, O-Artigo de periódico