Browsing by Author Meneses, EA

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PreviewIssue DateTitleAuthor(s)AdvisorType
2001Influence of Al content on temperature dependence of excitonic transitions in quantum wellsLourenco, SA; Dias, IFL; Laureto, E; Duarte, JL; Filho, DOT; Meneses, EA; Leite, JR-Artigo de periódico
2010Indirect optical absorption and origin of the emission from beta-FeSi2 nanoparticles: Bound exciton (0.809 eV) and band to acceptor impurity (0.795 eV) transitionsLang, R; Amaral, L; Meneses, EA-Artigo de periódico
2003Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substratesNoriega, OC; Tabata, A; Soares, JANT; Rodrigues, SCP; Leite, JR; Ribeiro, E; Fernandez, JRL; Meneses, EA; Cerdeira, F; As, DJ; Schikora, D; Lischka, K-Artigo de periódico
2013Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi2 nanoparticlesLang, R; de Menezes, AS; dos Santos, AO; Reboh, S; Meneses, EA; Amaral, L; Cardoso, LP-Artigo de periódico
2006Photoluminescence measurements on cubic InGaN layers deposited on a SiC substratePacheco-Salazar, DG; Leite, JR; Cerdeira, F; Meneses, EA; Li, SF; As, DJ; Lischka, K-Artigo de periódico
2002Photoluminescence study of interfaces between heavily doped Al0.48In0.52As : Si layers and InP (Fe) substratesPocas, LC; Duarte, JL; Dias, IFL; Laureto, E; Lourenco, SA; Toginho, DO; Meneses, EA; Mazzaro, I; Harmand, JC-Artigo de periódico
2003Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dotsDuarte, CA; da Silva, ECF; Quivy, AA; da Silva, MJ; Martini, S; Leite, JR; Meneses, EA; Lauretto, E-Artigo de periódico
2003Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si delta-doped GaAs/In0.15Ga0.85As quantum wellsCavalheiro, A; da Silva, ECF; Quivy, AA; Takahashi, EK; Martini, S; da Silva, MJ; Meneses, EA; Leite, JR-Artigo de periódico
2001Temperature dependence of optical transitions in AlGaAsLourenco, SA; Dias, IFL; Duarte, JL; Laureto, E; Meneses, EA; Leite, JR; Mazzaro, I-Artigo de periódico
2001Temperature dependence of excitonic transitions in AlxGa1-xAs/GaAs quantum wellsLourenco, SA; Dias, IFL; Duarte, JL; Laureto, E; Iwamoto, H; Meneses, EA; Leite, JR-Artigo de periódico
2005Growth and characterization of cubic InxGa1-xN epilayers on two different types of substratePacheco-Salazar, DG; Li, SF; Cerdeira, F; Meneses, EA; Leite, JR; Scolfaro, LMR; As, DJ; Lischka, K-Artigo de periódico
1997On the onset of InAs islanding on InP: influence of surface stepsCotta, MA; Mendonca, CAC; Meneses, EA; deCarvalho, MMG-Artigo de periódico
1998On the optical properties of InAs/InP systems: The role of two-dimensional structures and three-dimensional islandsMendonca, CAC; Laureto, E; Brasil, MJSP; Cotta, MA; Carvalho, MMG; Meneses, EA-Artigo de periódico
2000Effects of thermally activated hole escape mechanism on the optical and electrical properties in p-type Si delta-doped GaAs(311)A layersFrizzarini, M; da Silva, ECF; Quivy, AA; Cavalheiro, A; Leite, JR; Meneses, EA-Artigo de periódico
2003Near band-edge optical properties of cubic GaNFernandez, JRL; Noriega, OC; Soares, JANT; Cerdeira, F; Meneses, EA; Leite, JR; As, DJ; Schikora, D; Lischka, K-Artigo de periódico
2004Characterization of nanometric quantum wells in semiconductor heterostructures by optical spectroscopyLaureto, E; Vasconcellos, AR; Meneses, EA; Luzzi, R-Artigo de periódico
2010Nucleation and growth evolution of InP dots on InGaP/GaAsBortoleto, JRR; Gazoto, A; Brasil, MJSP; Meneses, EA; Cotta, MA-Artigo de periódico
2003Residual carbon and carrier concentration in InGaP layers grown by chemical beam epitaxyBettini, J; de Carvalho, MMG; Pudenzi, MAA; Laureto, E; Meneses, EA-Artigo de periódico
2006Statistical approach to fractal-structured systems: An illustration from the physics of semiconductor hetero structuresVasconcellos, AR; Laureto, E; Meneses, EA; Luzzi, R-Artigo de periódico
2009Optical properties in complex-structured nanometric quantum wells: Photoluminescence, photoluminescence excitation, and Stokes shiftSilva, AAP; Vasconcellos, AR; Luzzi, R; Meneses, EA; Laureto, E-Artigo de periódico