Browsing by Author Iikawa, F

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PreviewIssue DateTitleAuthor(s)AdvisorType
2011Optical properties of multi-layer type II InP/GaAs quantum dots studied by surface photovoltage spectroscopyIvanov, T; Donchev, V; Germanova, K; Gomes, PF; Iikawa, F; Brasil, MJSP; Cotta, MA-Artigo de periódico
2012Optical emission of InAs nanowiresMoller, M; de Lima, MM; Cantarero, A; Chiaramonte, T; Cotta, MA; Iikawa, F-Artigo de periódico
2010Optical emission and its decay time of type-II InP/GaAs quantum dotsGomes, PF; de Godoy, MPF; Dias, GO; Iikawa, F; Brasil, MJSP; Cotta, MA; Madureira, JR-Artigo de periódico
2013Optical phonon modes of wurtzite InPGadret, EG; de Lima, MM; Madureira, JR; Chiaramonte, T; Cotta, MA; Iikawa, F; Cantarero, A-Artigo de periódico
2011Polarized and resonant Raman spectroscopy on single InAs nanowiresMoller, M; de Lima, MM; Cantarero, A; Dacal, LCO; Madureira, JR; Iikawa, F; Chiaramonte, T; Cotta, MA-Artigo de periódico
2010Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculationsGadret, EG; Dias, GO; Dacal, LCO; de Lima, MM; Ruffo, CVRS; Iikawa, F; Brasil, MJSP; Chiaramonte, T; Cotta, MA; Tizei, LHG; Ugarte, D; Cantarero, A-Artigo de periódico
2002Quenching of the exciton-spin relaxation via exchange interaction in GaAs/AlxGa1-xAs quantum wellsUrdanivia, J; Iikawa, F; Maialle, MZ; Brum, JA; Hawrylak, P; Wasilewski, Z-Artigo de periódico
2014Defect spectroscopy of single ZnO microwiresVillafuerte, M; Ferreyra, JM; Zapata, C; Barzola-Quiquia, J; Iikawa, F; Esquinazi, P; Heluani, SP; de Lima, MM; Cantarero, A-Artigo de periódico
2005Ferromagnetic nanoclusters formed by Mn impllantation in GaAs - art. no. 071306Couto, ODD; Brasil, MJSP; Iikawa, F; Giles, C; Adriano, C; Bortoleto, JRR; Pudenzi, MAA; Gutierrez, HR; Danilov, I-Artigo de periódico
1999Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum wellTriques, ALC; Iikawa, F; Brum, JA; Maialle, MZ; Pereira, RG; Borghs, G-Artigo de periódico
2007Carrier dynamics in stacked InP/GaAs quantum dotsVeloso, AB; Nakaema, MKK; de Godoy, MPF; Lopes, JMJ; Iikawa, F; Brasil, MJSP; Bortoleto, JRR; Cotta, MA; Fichtner, PFP; Morschbacher, M; Madureira, JR-Artigo de periódico
2002On the origin of the blueshift from type-II quantum dots emission using microphotoluminescenceNakaema, MKK; Iikawa, F; Brasil, MJSP; Ribeiro, E; Medeiros-Ribeiro, G; Carvalho, W; Maialle, MZ; Degani, MH-Artigo de periódico
2006Exciton g factor of type-II InP/GaAs single quantum dotsde Godoy, MPF; Gomes, PF; Nakaema, MKK; Iikawa, F; Brasil, MJSP; Caetano, RA; Madureira, JR; Bortoleto, JRR; Cotta, MA; Ribeiro, E; Marques, GE; Bittencourt, ACR-Artigo de periódico
2013Excitonic wavefunction engineering based on type II quantum dotsDacal, LCO; Iikawa, F; Brasil, MJSP-Artigo de periódico
2007Spatially indirect excitons in type-II quantum dotsMadureira, JR; de Godoy, MPF; Brasil, MJSP; Iikawa, F-Artigo de periódico
2011Spatial carrier distribution in InP/GaAs type II quantum dots and quantum postsIikawa, F; Donchev, V; Ivanov, T; Dias, GO; Tizei, LHG; Lang, R; Heredia, E; Gomes, PF; Brasil, MJSP; Cotta, MA; Ugarte, D; Pastor, JPM; de Lima, MM; Cantarero, A-Artigo de periódico
2005Optical and structural investigation of In1-xGaxP free-standing microrodsNakaema, MKK; Godoy, MPF; Brasil, MJSP; Iikawa, F; Silva, D; Sacilotti, M; Decobert, J; Patriarche, G-Artigo de periódico
2007Type-I optical emissions in Ge/Si quantum dotsGomes, PF; Iikawa, F; Cerdeira, F; Larsson, M; Elfving, A; Hansson, GV; Ni, WX; Holtz, PO-Artigo de periódico
2008Giant effective g-factor in Pb(x)Eu(1-x)Te epitaxial filmsHeredia, E; Rappl, PHD; Motisuke, P; Gazoto, AL; Iikawa, F; Brasil, MJSP-Artigo de periódico
2012High energy sideband on the magnetic polaron related luminescence in EuTeHeredia, E; Motisuke, P; Rappl, PHD; Brasil, MJSP; Iikawa, F-Artigo de periódico