Browsing by Author Freire, VN

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

or enter first few letters:  
Showing results 1 to 12 of 12
PreviewIssue DateTitleAuthor(s)AdvisorType
2008Mobius and twisted graphene nanoribbons: Stability, geometry, and electronic propertiesCaetano, EWS; Freire, VN; dos Santos, SG; Galvao, DS; Sato, F-Artigo de periódico
2009Defects in Graphene-Based Twisted Nanoribbons: Structural, Electronic, and Optical PropertiesCaetano, EWS; Freire, VN; dos Santos, SG; Albuquerque, EL; Galvao, DS; Sato, F-Artigo de periódico
2005Nonlinear transport properties of III-nitrides in electric fieldRodrigues, CG; Vasconcellos, AR; Luzzi, R; Freire, VN-Artigo de periódico
2005Nonlinear transport properties of doped III-N and GaAs polar semiconductors: A comparisonRodrigues, CG; Vasconcellos, AR; Luzzi, R; Freire, VN-Artigo de periódico
2009C-60-derived nanobaskets: stability, vibrational signatures, and molecular trappingdos Santos, SG; Pires, MS; Lemos, V; Freire, VN; Caetano, EWS; Galvao, DS; Sato, F; Albuquerque, EL-Artigo de periódico
2007Transient transport in III-nitrides: interplay of momentum and energy relaxation timesRodrigues, CG; Vasconcellos, AR; Luzzi, R; Freire, VN-Artigo de periódico
2000Smooth interface effects on the Raman scattering in zinc-blende AlN/GaN superlatticesBezerra, EF; Freire, VN; Teixeira, AMR; Silva, MAA; Freire, PTC; Mendes, J; Lemos, V-Artigo de periódico
2000Velocity overshoot onset in nitride semiconductorsRodrigues, CG; Freire, VN; Vasconcellos, AR; Luzzi, R-Artigo de periódico
2004Hole mobility in zincblende c-GaNRodrigues, CG; Fernandez, JRL; Leite, JR; Chitta, VA; Freire, VN; Vasconcellos, AR; Luzzi, R-Artigo de periódico
2003Hot-phonon bottleneck in the photoinjected plasma in GaNVasconcellos, AR; Luzzi, R; Rodrigues, CG; Freire, VN-Artigo de periódico
2001Urbach's tail in III-nitrides under an electric fieldRodrigues, CG; Vasconcellos, AR; Luzzi, R; Freire, VN-Artigo de periódico
2004A Raman scattering-based method to probe the carrier drift velocity in semiconductors: Application to gallium nitrideAndrade-Neto, AV; Vasconcellos, AR; Luzzi, R; Freire, VN-Artigo de periódico