Browsing by Author Frateschi, NC

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PreviewIssue DateTitleAuthor(s)AdvisorType
2009Low-roughness active microdisk resonators fabricated by focused ion beamBarea, LAM; Vallini, F; Vaz, AR; Mialichi, JR; Frateschi, NC-Artigo de periódico
2012a-SiOx < Er > active photonic crystal resonator membrane fabricated by focused Ga+ ion beamFigueira, DSL; Barea, LAM; Vallini, F; Jarschel, PF; Lang, R; Frateschi, NC-Artigo de periódico
2000Analysis of Be doping of InGaP lattice matched to GaAsBettini, J; de Carvalho, MMG; Cotta, MA; Pudenzi, MAA; Frateschi, NC; Silva, A; Cardoso, LP; Landers, R-Artigo de periódico
2006Black-box model for the complete characterization of the spectral gain and noise in semiconductor optical amplifiersGallep, CM; Rieznik, AA; Fragnito, H; Frateschi, NC; Conforti, E-Artigo de periódico
2013Silicon technology compatible photonic molecules for compact optical signal processingBarea, LAM; Vallini, F; Jarschel, PF; Frateschi, NC-Artigo de periódico
2010Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In0.68Ga0.32As0.7P0.3) barriers for high current injection efficiencyMialichi, JR; Frateschi, NC-Artigo de periódico
2013Purcell effect in sub-wavelength semiconductor lasersGu, Q; Slutsky, B; Vallini, F; Smalley, JST; Nezhad, MP; Frateschi, NC; Fainman, Y-Artigo de periódico
2004Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxyde Castro, MPP; von Zuben, AA; Frateschi, NC; Santo, LLE; Galvao, DS; Bettini, J; de Carvalho, MMG-Artigo de periódico
2010Mode pattern dependence on the eccentricity of microstadium resonatorsda Silva, A; Barea, LAM; Vallini, F; von Zuben, AAG; Frateschi, NC-Artigo de periódico
2007Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrixMestanza, SNM; Doi, I; Swart, JW; Frateschi, NC-Artigo de periódico
2008Evidences of the simultaneous presence of bow-tie and diamond scars in rare-earth doped amorphous silicon microstadium resonatorsFigueira, DSL; Frateschi, NC-Artigo de periódico
2013Carrier saturation in multiple quantum well metallo-dielectric semiconductor nanolaser: Is bulk material a better choice for gain media?Vallini, F; Gu, Q; Kats, M; Fainman, Y; Frateschi, NC-Artigo de periódico
2006Electron cyclotron plasma etching damage investigated by InGaAs/GaAs quantum well photoluminescenceMestanza, SNM; Frateschi, NC-Artigo de periódico
2009Enhanced side-mode suppression in chaotic stadium microcavity lasersMestanza, SNM; Von Zuben, AA; Frateschi, NC-Artigo de periódico
2010Hybrid planar microresonators with organic and InGaAs active mediaMialichi, JR; Camposeo, A; Persano, L; Barea, LAM; Del Carro, P; Pisignano, D; Frateschi, NC-Artigo de periódico
2007GaN nano- and micro-spheres fabricated selectively on siliconBarea, LAM; von Zuben, AAG; Marquez, AZ; Frateschi, NC-Artigo de periódico
2009Resonant structures based on amorphous silicon suboxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nmFigueira, DSL; Mustafa, D; Tessler, LR; Frateschi, NC-Artigo de periódico
2000Electrical isolation and transparency in ion-irradiated p-InGaP/GaAs/InGaAs structuresDanilov, I; Pataro, LL; de Castro, MPP; Frateschi, NC-Artigo de periódico
2013Spectral Engineering With CMOS Compatible SOI Photonic MoleculesBarea, LAM; Vallini, F; de Rezende, GFM; Frateschi, NC-Artigo de periódico
1999Spatial composition dependence in InGaP growth on pre-patterned GaAs substrates by chemical beam epitaxyde Castro, MPP; Frateschi, NC; Bettini, J; Ribeiro, CA; de Carvalho, MM-Artigo de periódico