Browsing by Author Doi, I
Showing results 1 to 10 of 10
Preview | Issue Date | Title | Author(s) | Advisor | Type |
| 2006 | A novel Si micromachined moving-coil induction actuated mm-sized resonant scanner | Oliveira, LCM; Barbaroto, PR; Ferreira, LOS; Doi, I | - | Artigo de periódico |
| 2007 | Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma | Biasotto, C; Daltrini, AM; Teixeira, RC; Boscoli, FA; Diniz, JA; Moshkalev, SA; Doi, I | - | Artigo de periódico |
| 2006 | Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTs | Zoccal, LB; Diniz, JA; Doi, I; Swart, JW; Daltrini, AM; Moshkalyov, SA | - | Artigo de periódico |
| 2013 | Influence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devices | Lima, LPB; Diniz, JA; Radtke, C; dos Santos, MVP; Doi, I; Fo, JG | - | Artigo de periódico |
| 2007 | Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrix | Mestanza, SNM; Doi, I; Swart, JW; Frateschi, NC | - | Artigo de periódico |
| 2012 | TiN/titanium-aluminum oxynitride/Si as new gate structure for 3D MOS technology | Miyoshi, J; Lima, LPB; Diniz, JA; Cavarsan, FA; Doi, I; Godoy, J; Silva, AR | - | Artigo de periódico |
| 2012 | Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function | Lima, LPB; Diniz, JA; Doi, I; Fo, JG | - | Artigo de periódico |
| 1998 | Annealing-induced enhancement in the activation energy of heavily boron-doped polycrystalline diamond | Li, BB; Baranauskas, V; Peterlevitz, A; Chang, DC; Doi, I; Trava-Airoldi, VJ; Corat, EJ | - | Artigo de periódico |
| 2006 | Characterization and modeling of antireflective coatings of SiO2, Si3N4, and SiOxNy deposited by electron cyclotron resonance enhanced plasma chemical vapor deposition | Mestanza, SNM; Obrador, MP; Rodriguez, E; Biasotto, C; Doi, I; Diniz, JA; Swart, JW | - | Artigo de periódico |
| 2012 | Oxygen incorporation and dipole variation in tantalum nitride film used as metal-gate electrode | Lima, LPB; Diniz, JA; Doi, I; Miyoshi, J; Silva, AR; Fo, JG; Radtke, C | - | Artigo de periódico |