Browsing by Author Diniz, JA

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Showing results 1 to 17 of 17
PreviewIssue DateTitleAuthor(s)AdvisorType
2012Oxygen incorporation and dipole variation in tantalum nitride film used as metal-gate electrodeLima, LPB; Diniz, JA; Doi, I; Miyoshi, J; Silva, AR; Fo, JG; Radtke, C-Artigo de periódico
1996Oxynitride films formed by low energy NO+ implantation into siliconDiniz, JA; Tatsch, PJ; Pudenzi, MAA-Artigo de periódico
2013Influence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devicesLima, LPB; Diniz, JA; Radtke, C; dos Santos, MVP; Doi, I; Fo, JG-Artigo de periódico
1998Inductively coupled plasma etching of In-based compound semiconductors in CH4/H-2/ArDiniz, JA; Swart, JW; Jung, KB; Hong, J; Pearton, SJ-Artigo de periódico
2014Optically Controlled Reconfigurable Antenna Array Based on E-Shaped ElementsSodre, AC; da Costa, IF; Manera, LT; Diniz, JA-Artigo de periódico
2013Fabrication of p-type silicon nanowires for 3D FETs using focused ion beamdos Santos, MVP; Lima, LPB; Diniz, JA; Godoy, J-Artigo de periódico
2006Characterization and modeling of antireflective coatings of SiO2, Si3N4, and SiOxNy deposited by electron cyclotron resonance enhanced plasma chemical vapor depositionMestanza, SNM; Obrador, MP; Rodriguez, E; Biasotto, C; Doi, I; Diniz, JA; Swart, JW-Artigo de periódico
2012Terahertz Photometer to Observe Solar Flares in ContinuumMarcon, R; Kaufmann, P; Fernandes, LOT; Godoy, R; Marun, A; Bortolucci, EC; Zakia, MB; Diniz, JA; Kudaka, AS-Artigo de periódico
2007Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasmaBiasotto, C; Daltrini, AM; Teixeira, RC; Boscoli, FA; Diniz, JA; Moshkalev, SA; Doi, I-Artigo de periódico
2006Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTsZoccal, LB; Diniz, JA; Doi, I; Swart, JW; Daltrini, AM; Moshkalyov, SA-Artigo de periódico
2009Submicrometer-MOS capacitor with ultra high capacitance biased by Au nanoelectrodesKisner, A; Aguiar, MR; Vaz, AF; Rojas, A; Cavarsan, FA; Diniz, JA; Kubota, LT-Artigo de periódico
2012TiN/titanium-aluminum oxynitride/Si as new gate structure for 3D MOS technologyMiyoshi, J; Lima, LPB; Diniz, JA; Cavarsan, FA; Doi, I; Godoy, J; Silva, AR-Artigo de periódico
2012Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work functionLima, LPB; Diniz, JA; Doi, I; Fo, JG-Artigo de periódico
2012Ambipolar acoustic transport in siliconBarros, AD; Batista, PD; Tahraoui, A; Diniz, JA; Santos, PV-Artigo de periódico
2002Study of conditions for anisotropic plasma etching of tungsten and tungsten nitride using SF6/Ar gas mixturesReyes-Betanzo, C; Moshkalyov, SA; Ramos, AC; Diniz, JA; Swart, JW-Artigo de periódico
2008Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applicationsBiasotto, C; Diniz, JA; Daltrini, AM; Moshkalev, SA; Monteiro, MJR-Artigo de periódico
2014Metal gate work function tuning by Al incorporation in TiNLima, LPB; Dekkers, HFW; Lisoni, JG; Diniz, JA; Van Elshocht, S; De Gendt, S-Artigo de periódico