Browsing by Author Brum, JA

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PreviewIssue DateTitleAuthor(s)AdvisorType
1997Interacting valence holes in p-type SiGe quantum disks in a magnetic fieldRego, LGC; Hawrylak, P; Brum, JA; Wojs, A-Artigo de periódico
1998Interface roughness localization in quantum wells and quantum wiresRasnik, I; Rego, LGC; Marquezini, MV; Triques, ALC; Brasil, MJSP; Brum, JA; Cotta, MA-Artigo de periódico
2002Quenching of the exciton-spin relaxation via exchange interaction in GaAs/AlxGa1-xAs quantum wellsUrdanivia, J; Iikawa, F; Maialle, MZ; Brum, JA; Hawrylak, P; Wasilewski, Z-Artigo de periódico
2003Influence of the coupling between center of mass and internal degrees of freedom on the binding energy of magnetotrionsDacal, LCO; Brum, JA-Artigo de periódico
1999Electron-spin polarization near the Fermi level in n-type modulation-doped semiconductor quantum wellsTriques, ALC; Urdanivia, J; Iikawa, F; Maialle, MZ; Brum, JA; Borhgs, G-Artigo de periódico
2011Enhanced magneto-optical oscillations from two-dimensional hole-gases in the presence of Mn ionsGazoto, AL; Brasil, MJSP; Iikawa, F; Brum, JA; Ribeiro, E; Danilov, YA; Vikhrova, OV; Zvonkov, BN-Artigo de periódico
1998Electronic structure of holes in modulation doped p-Si1-xGex/Si strained quantum wells in a magnetic fieldRego, LGC; Hawrylak, P; Brum, JA-Artigo de periódico
1996Evolution of the interband absorption threshold with the density of a two-dimensional electron gasBrown, SA; Young, JF; Brum, JA; Hawrylak, P; Wasilewski, Z-Artigo de periódico
1997Exciton center-of-mass dispersion in semiconductor quantum wellsTriques, ALC; Brum, JA-Artigo de periódico
1999Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum wellTriques, ALC; Iikawa, F; Brum, JA; Maialle, MZ; Pereira, RG; Borghs, G-Artigo de periódico
1996Exciton dynamics in a single quantum well with self-assembled islandsMarquezini, MV; Brasil, MJSP; Brum, JA; Poole, P; Charbonneau, S; Tamargo, MC-Artigo de periódico
2002Negatively charged donors in semiconductor quantum wells in the presence of longitudinal magnetic and electric fieldsDacal, LCO; Brum, JA-Artigo de periódico
1996State coupling effects in GaAs/InGaAs/AlGaAs modulation doped quantum wellsAbbade, MLF; Iikawa, F; Brum, JA; Troster, T; Bernussi, AA; Pereira, RG; Borghs, G-Artigo de periódico
1999Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunctionKerridge, GC; Greally, MG; Hayne, M; Usher, A; Plaut, AS; Brum, JA; Holland, MC; Stanley, CR-Artigo de periódico
2001Strain-dependent optical emission in In1-xGaxAs/InP quantum wellsTudury, HAP; Nakaema, MKK; Iikawa, R; Brum, JA; Ribeiro, E; Carvalho, W; Bernussi, AA; Gobbi, AL-Artigo de periódico
2001The role of finite hole mass in the negatively charged exciton in two dimensionsNarvaez, GA; Hawrylak, P; Brum, JA-Artigo de periódico
2000Screening effects on the spin splitting in n-doped GaAs/AlGaAs quantum wellsUrdanivia, J; Iikawa, F; Brum, JA; Maialle, MZ; Hawrylak, P; Wasilewski, Z-Artigo de periódico
2013Compensation effect on the CW spin-polarization degree of Mn-based structuresBalanta, MAG; Brasil, MJSP; Iikawa, F; Mendes, UC; Brum, JA; Maialle, MZ; Danilov, YA; Vikhrova, OV; Zvonkov, BN-Artigo de periódico
2002Binding energy of charged excitons in semiconductor quantum wells in the presence of longitudinal electric fieldsDacal, LCO; Brum, JA-Artigo de periódico
2002Binding energy of charged excitons bound to interface defects of semiconductor quantum wellsDacal, LCO; Ferreira, R; Bastard, G; Brum, JA-Artigo de periódico