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PreviewIssue DateTitleAuthor(s)AdvisorType
2011Spin injection from two-dimensional electron and hole gases in resonant tunneling diodesGobato, YG; Galeti, HVA; dos Santos, LF; Lopez-Richard, V; Cesar, DF; Marques, GE; Brasil, MJSP; Orlita, M; Kunc, J; Maude, DK; Henini, M; Airey, RJ-Artigo de periódico
2011Spin effects in InAs self-assembled quantum dotsdos Santos, EC; Gobato, YG; Brasil, MJSP; Taylor, DA; Henini, M-Artigo de periódico
2012Spin injection in n-type resonant tunneling diodesGordo, VO; Herval, LKS; Galeti, HVA; Gobato, YG; Brasil, MJSP; Marques, GE; Henini, M; Airey, RJ-Artigo de periódico
2011Circular polarization in a non-magnetic resonant tunneling devicedos Santos, LF; Gobato, YG; Teodoro, MD; Lopez-Richard, V; Marques, GE; Brasil, MJSP; Orlita, M; Kunc, J; Maude, DK; Henini, M; Airey, RJ-Artigo de periódico
2007Circular polarization from a nonmagnetic p-i-n resonant tunneling diodede Carvalho, HB; Brasil, MJSP; Gobato, YG; Marques, GE; Galeti, HVA; Henini, M; Hill, G-Artigo de periódico
2013Compensation effect on the CW spin-polarization degree of Mn-based structuresBalanta, MAG; Brasil, MJSP; Iikawa, F; Mendes, UC; Brum, JA; Maialle, MZ; Danilov, YA; Vikhrova, OV; Zvonkov, BN-Artigo de periódico
2012Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodesGaleti, HVA; Gobato, YG; Gordo, VO; dos Santos, LF; Brasil, MJSP; Lopez-Richard, V; Marques, GE; Orlita, M; Kunc, J; Maude, DK; Henini, M; Airey, RJ-Artigo de periódico
1996Magnetoexciton anisotropy in quantum wells versus quantum wiresMarquezini, MV; Brasil, MJSP; Cotta, MA; Brum, JA; Bernussi, AA-Artigo de periódico
2000An optical study of self-assembled InxGa1-xAs/GaAs quantum dots embedded in a two-dimensional electron gasRibeiro, E; Cerdeira, F; Brasil, MJSP; Heinzel, T; Ensslin, K; Medeiros-Ribeiro, G; Petroff, PM-Artigo de periódico
2008Role of X valley on the dynamics of electron transport through a GaAs/AlAs double-barrier structureGaleti, HVA; de Carvalho, HB; Brasil, MJSP; Gobato, Y; Lopez-Richard, V; Marques, GE; Henini, M; Hill, G-Artigo de periódico
2006Voltage-controlled hole spin injection in nonmagnetic GaAs/AlAs resonant tunneling structuresde Carvalho, HB; Gobato, YG; Brasil, MJSP; Lopez-Richard, V; Marques, GE; Camps, I; Henini, M; Eaves, L; Hill, G-Artigo de periódico
2007Properties of GaAs/InGaAs Quantum-Size Structures Containing delta < Mn >-Doped LayersVikhrova, OV; Danilov, YA; Drozdov, YN; Zvonkov, BN; Iikawa, F; Brasil, MJSP-Artigo de periódico
2002Thermal equilibrium governing the formation of negatively charged excitons in resonant tunneling diodesVercik, A; Gobato, YG; Brasil, MJSP-Artigo de periódico
2012Structural and photophysical properties of anthracenyl and carbazolyl groups in silicone-based polymersDomingues, RA; Martins, TD; Yoshida, IVP; Brasil, MJSP; Atvars, TDZ-Artigo de periódico
2007Structural aspects of Langmuir-Blodgett and cast films of zinc phthalocyanine and zinc hexadecafluorophthalocyanineGaffo, L; Zucolotto, V; Cordeiro, MR; Moreira, WC; Oliveira, ON; Cerdeira, F; Brasil, MJSP-Artigo de periódico
2005Ferromagnetic nanoclusters formed by Mn impllantation in GaAs - art. no. 071306Couto, ODD; Brasil, MJSP; Iikawa, F; Giles, C; Adriano, C; Bortoleto, JRR; Pudenzi, MAA; Gutierrez, HR; Danilov, I-Artigo de periódico
1996Exciton dynamics in a single quantum well with self-assembled islandsMarquezini, MV; Brasil, MJSP; Brum, JA; Poole, P; Charbonneau, S; Tamargo, MC-Artigo de periódico
2006Exciton g factor of type-II InP/GaAs single quantum dotsde Godoy, MPF; Gomes, PF; Nakaema, MKK; Iikawa, F; Brasil, MJSP; Caetano, RA; Madureira, JR; Bortoleto, JRR; Cotta, MA; Ribeiro, E; Marques, GE; Bittencourt, ACR-Artigo de periódico
2013Excitonic wavefunction engineering based on type II quantum dotsDacal, LCO; Iikawa, F; Brasil, MJSP-Artigo de periódico
2005Effect of a magnetic field on the magnetostructural phase transition of MnAs films on GaAsIikawa, F; Knobel, M; Santos, PV; Adriano, C; Couto, ODD; Brasil, MJSP; Giles, C; Magalhaes-Paniago, R; Daweritz, L-Artigo de periódico