Browsing by Author Bettini, J

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PreviewIssue DateTitleAuthor(s)AdvisorType
2011Intrinsic Stability of the Smallest Possible Silver NanotubeAutreto, PAS; Lagos, MJ; Sato, F; Bettini, J; Rocha, AR; Rodrigues, V; Ugarte, D; Galvao, DS-Artigo de periódico
2004Indication of unusual pentagonal structures in atomic-size Cu nanowiresGonzalez, JC; Rodrigues, V; Bettini, J; Rego, LGC; Rocha, AR; Coura, PZ; Dantas, SO; Sato, F; Galvao, DS; Ugarte, D-Artigo de periódico
2008Designing spatial correlation of quantum dots: towards self-assembled three-dimensional structuresBortoleto, JRR; Zelcovit, JG; Gutierrez, HR; Bettini, J; Cotta, MA-Artigo de periódico
2005Real-time atomic resolution study of metal nanowiresBettini, J; Rodrigues, V; Gonzalez, JC; Ugarte, D-Artigo de periódico
2005Liquid carbon, carbon-glass beads, and the crystallization of carbon nanotubesde Heer, WA; Poncharal, P; Berger, C; Gezo, J; Song, ZM; Bettini, J; Ugarte, D-Artigo de periódico
2009Observation of the smallest metal nanotube with a square cross-sectionLagos, MJ; Sato, F; Bettini, J; Rodrigues, V; Galvao, DS; Ugarte, D-Artigo de periódico
2002Quantum conductance in silver nanowires: Correlation between atomic structure and transport propertiesRodrigues, V; Bettini, J; Rocha, AR; Rego, LGC; Ugarte, D-Artigo de periódico
2005Evidence of formation of Si-C bonds during growth of Si-doped III-V semiconductor compoundsBettini, J; de Carvalho, MMG-Artigo de periódico
2006Experimental realization of suspended atomic chains composed of different atomic speciesBettini, J; Sato, F; Coura, PZ; Dantas, SO; Galvao, DS; Ugarte, D-Artigo de periódico
2004Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxyde Castro, MPP; von Zuben, AA; Frateschi, NC; Santo, LLE; Galvao, DS; Bettini, J; de Carvalho, MMG-Artigo de periódico
2002Electrical isolation of InGaP by proton and helium ion irradiationDanilov, I; de Souza, JP; Boudinov, H; Bettini, J; de Carvalho, MMG-Artigo de periódico
2003Residual carbon and carrier concentration in InGaP layers grown by chemical beam epitaxyBettini, J; de Carvalho, MMG; Pudenzi, MAA; Laureto, E; Meneses, EA-Artigo de periódico
1999Spatial composition dependence in InGaP growth on pre-patterned GaAs substrates by chemical beam epitaxyde Castro, MPP; Frateschi, NC; Bettini, J; Ribeiro, CA; de Carvalho, MM-Artigo de periódico
2013Tuning resistive switching on single-pulse doped multilayer memristorsSiles, PF; de Pauli, M; Bufon, CCB; Ferreira, SO; Bettini, J; Schmidt, OG; Malachias, A-Artigo de periódico
2006Transmission electron microscopy and molecular dynamics study of the formation of suspended copper linear atomic chainsSato, F; Moreira, AS; Bettini, J; Coura, PZ; Dantas, SO; Ugarte, D; Galvao, DS-Artigo de periódico
2003Spatial ordering in InP/InGaP nanostructuresBortoleto, JRR; Gutierrez, HR; Cotta, MA; Bettini, J; Cardoso, LP; de Carvalho, MMG-Artigo de periódico
2003Role of V/III ratio on atomic ordering and surface morphology of InGaP layers grown by chemical beam epitaxyBettini, J; de Carvalho, MMG; Cotta, MA; Ugarte, D-Artigo de periódico
2011Study of roughness evolution and layer stacking faults in short-period atomic layer deposited HfO2/Al2O3 multilayersde Pauli, M; Malachias, A; Westfahl, H; Bettini, J; Ramirez, A; Huang, GS; Mei, YF; Schmidt, OG-Artigo de periódico
2008Heterostructure interface roughness characterization by chemical mapping: Application to InGaP/GaAs quantum wellsTizei, LHG; Bettini, J; Carvalho, MMG; Ugarte, D-Artigo de periódico
1998In0.49Ga0.51P growth on pre-patterned GaAs substrates by chemical beam epitaxyde Castro, MPP; Frateschi, NC; Bettini, J; de Carvalho, MM-Artigo de periódico