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PreviewIssue DateTitleAuthor(s)AdvisorType
2006Electric-field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devicesde Carvalho, HB; Brasil, MJSP; Lopez-Richard, V; Gobato, YG; Marques, GE; Camps, I; Dacal, LCO; Henini, M; Eaves, L; Hill, G-Artigo de periódico
2005Effects of laser irradiation and annealing on rhodium phthalocyanine Langmuir-Blodgett filmsGaffo, L; Brasil, MJSP; Cerdeira, F; Moreira, WC-Artigo de periódico
2005Effect of a magnetic field on the magnetostructural phase transition of MnAs films on GaAsIikawa, F; Knobel, M; Santos, PV; Adriano, C; Couto, ODD; Brasil, MJSP; Giles, C; Magalhaes-Paniago, R; Daweritz, L-Artigo de periódico
2010Nucleation and growth evolution of InP dots on InGaP/GaAsBortoleto, JRR; Gazoto, A; Brasil, MJSP; Meneses, EA; Cotta, MA-Artigo de periódico
2006Voltage-controlled hole spin injection in nonmagnetic GaAs/AlAs resonant tunneling structuresde Carvalho, HB; Gobato, YG; Brasil, MJSP; Lopez-Richard, V; Marques, GE; Camps, I; Henini, M; Eaves, L; Hill, G-Artigo de periódico
2012Anomalous optical properties of GaMnAs/AlAs quantum wells grown by molecular beam epitaxyRodrigues, DH; Brasil, MJSP; Gobato, YG; Holgado, DPA; Marques, GE; Henini, M-Artigo de periódico
2014Anomalous strain behavior on EuTe self-assembled islandsHeredia, E; Diaz, B; Malachias, A; Rappl, PHO; Iikawa, F; Brasil, MJSP; Motisuke, P-Artigo de periódico
2008Giant effective g-factor in Pb(x)Eu(1-x)Te epitaxial filmsHeredia, E; Rappl, PHD; Motisuke, P; Gazoto, AL; Iikawa, F; Brasil, MJSP-Artigo de periódico
2012High energy sideband on the magnetic polaron related luminescence in EuTeHeredia, E; Motisuke, P; Rappl, PHD; Brasil, MJSP; Iikawa, F-Artigo de periódico
2008Polarization resolved luminescence in asymmetric n-type GaAs/AlGaAs resonant tunneling diodesdos Santos, LF; Gobato, YG; Lopez-Richard, V; Marques, GE; Brasil, MJSP; Henini, M; Airey, RJ-Artigo de periódico
2010Optical emission and its decay time of type-II InP/GaAs quantum dotsGomes, PF; de Godoy, MPF; Dias, GO; Iikawa, F; Brasil, MJSP; Cotta, MA; Madureira, JR-Artigo de periódico
2011Optical properties of multi-layer type II InP/GaAs quantum dots studied by surface photovoltage spectroscopyIvanov, T; Donchev, V; Germanova, K; Gomes, PF; Iikawa, F; Brasil, MJSP; Cotta, MA-Artigo de periódico
2011Spatial carrier distribution in InP/GaAs type II quantum dots and quantum postsIikawa, F; Donchev, V; Ivanov, T; Dias, GO; Tizei, LHG; Lang, R; Heredia, E; Gomes, PF; Brasil, MJSP; Cotta, MA; Ugarte, D; Pastor, JPM; de Lima, MM; Cantarero, A-Artigo de periódico
2009Ambipolar diffusion and spatial and time-resolved spectroscopies in semiconductor heterostructuresVasconcellos, AR; Brasil, MJSP; Luzzi, R; Silva, AAP; Leite, AHS-Artigo de periódico
2007Spatially indirect excitons in type-II quantum dotsMadureira, JR; de Godoy, MPF; Brasil, MJSP; Iikawa, F-Artigo de periódico
2010Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculationsGadret, EG; Dias, GO; Dacal, LCO; de Lima, MM; Ruffo, CVRS; Iikawa, F; Brasil, MJSP; Chiaramonte, T; Cotta, MA; Tizei, LHG; Ugarte, D; Cantarero, A-Artigo de periódico
2005The dynamics of excitons and trions in resonant tunneling diodesCamps, I; Makler, SS; Vercik, A; Gobato, YG; Marques, GE; Brasil, MJSP-Artigo de periódico
2006Strain redistribution at the phase transition of MnAs/GaAs(001) filmsAdriano, C; Giles, C; Couto, ODD; Brasil, MJSP; Iikawa, F; Daweritz, L-Artigo de periódico
2005The effect of cyclic voltammetry on the crystalline order of PdPc thin filmsGaffo, L; Brasil, MJSP; Cerdeira, F; Giles, C; Moreira, WC-Artigo de periódico
2008Role of X valley on the dynamics of electron transport through a GaAs/AlAs double-barrier structureGaleti, HVA; de Carvalho, HB; Brasil, MJSP; Gobato, Y; Lopez-Richard, V; Marques, GE; Henini, M; Hill, G-Artigo de periódico